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| IRFM5210 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) P-CHANNEL MOSFET IN A TO254 FOR HIGH RELIABILITY APPLICATIONS. VDSS ID RDS(on) 100V 34A 0.07 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC FEATURES * FAST SWITCHING * SCREENING OPTIONS AVAILABLE TO-254AA Pin 1 -Drain Pin 2 - Source Pin 3 - Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD EAS EAR TJ , Tstg RJC Gate - Source Voltage Continuous Drain Current (Tcase = 25C) Continuous Drain Current (Tcase = 100C) 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy 2 Repetitive Avalanche Energy 1 Operating Junction and Storage Temperature Range Junction - Case Thermal Resistance 20V -34A -21A -136A 125W 1.0W/C 520mJ 12mJ -55 to +150C 1.0W/C Notes 1) Repetitive rating; pulse width limited by max. junction temperature. 2) VDD = -25V , L = 3.5mH , RG = 25 , IAS = -21A , Starting TJ = 25C, VGS = -10V Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2612 Issue 1 IRFM5210 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS V(BR)DSS Drain - Source Breakdown Voltage RDS(on) VGS(th) gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Static Drain to Source On Resistance 2 Gate Threshold Voltage Forward Transconductance Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time VGS = 0V VDS = -25V f = 1MHz ID = -21A VDS = -80V VDD = -50V ID = -21A RG = 2.5 VGS = -10V VGS = -10V 17 86 79 81 D Test Conditions VGS = 0V VGS = -10V VDS = VGS VDS = -15V VDS = -100V VDS = -80V VGS = -20V VGS = 20V ID = -250A ID = -21A ID = -250A ID = -21A VGS = 0V VGS = 0V TJ = 125C Min. -100 Typ. Max. Unit V 0.07 - 2.0 10 -25 -250 -100 100 2700 790 450 180 25 97 28 150 100 120 100 -34 -136 -1.6 170 1.2 5.0 260 1.8 17 4.5 7.5 -4.0 V S A nA pF nC ns Fall Time RG = 2.4 SOURCE - DRAIN CHARACTERISTICS Continuous Source Current Pulse Source Current 1 Diode Forward Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge 2 Forward Turn-On Time PACKAGE CHARACTERISTICS Internal Drain Internal Source Inductance Between lead, 6mm(0.25in.) from package and center of die contact MOSFET symbol showing the G A V ns C -- integral reverse p-n junction S TJ = 25C, IS = 21A, VGS = 0V di / dt -100A/s TJ = 25C, IF = -21A negligible nH Notes 1) Repetitive rating; pulse width limited by max. junction temperature. 2) Pulse Test: Pulse Width 300ms, 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2612 Issue 1 |
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